Single-electron transistor based on a silicon-on-insulator quantum wire fabricated by a side-wall patterning method
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Doyeol Ahn | J. D. Lee | Suk-Kang Sung | K. Kim | D. Ahn | S. W. Hwang | Kyung Rok Kim | Byeoung-Soo Park | Do-Hee Kim | Jung Suk Sim | Beom-Soon Choi | Suk-kang Sung | Byeoung-Soo Park | Do-Hee Kim | S. Hwang | J. Sim | J. D. Lee | Beom-Soon Choi
[1] T. Hiramoto,et al. On the origin of tunneling barriers in silicon single electron and single hole transistors , 1999 .
[2] Byung-Gook Park,et al. Room Temperature Coulomb Oscillation of a Single Electron Switch with an Electrically Formed Quantum Dot and Its Modeling , 2000 .
[3] G. Guegan,et al. Coulomb blockade in low-mobility nanometer size Si MOSFET’s , 2000 .
[4] Stephen Y. Chou,et al. Silicon single-electron quantum-dot transistor switch operating at room temperature , 1998 .
[5] Yasuo Takahashi,et al. Fabrication technique for Si single-electron transistor operating at room temperature , 1995 .
[6] Toshiro Hiramoto,et al. Quantum mechanical effects in the silicon quantum dot in a single-electron transistor , 1997 .
[7] H. Matsuoka,et al. Coulomb blockade in the inversion layer of a Si metal‐oxide‐semiconductor field‐effect transistor with a dual‐gate structure , 1994 .
[8] Yasuo Takahashi,et al. Si complementary single-electron inverter with voltage gain , 2000 .
[9] Magnus Willander,et al. Electron Transport in Nanocrystalline Si Based Single Electron Transistors , 2000 .
[10] R. A. Smith,et al. Gate controlled Coulomb blockade effects in the conduction of a silicon quantum wire , 1997 .
[11] Toshiro Hiramoto,et al. Coulomb blockade oscillations at room temperature in a Si quantum wire metal‐oxide‐semiconductor field‐effect transistor fabricated by anisotropic etching on a silicon‐on‐insulator substrate , 1996 .
[12] H. Hasegawa,et al. Voltage Gain in GaAs-Based Lateral Single-Electron Transistors Having Schottky Wrap Gates , 1999 .
[13] Yasuo Takahashi,et al. Multigate single-electron transistors and their application to an exclusive-OR gate , 2000 .
[14] Doped silicon single electron transistors with single island characteristics , 2000 .
[15] Yasuo Takahashi,et al. Size dependence of the characteristics of Si single-electron transistors on SIMOX substrates , 1996 .
[16] Serge Biesemans,et al. Single-electron effects in heavily doped polycrystalline silicon nanowires , 1998 .
[17] Designing of silicon effective quantum dots by using the oxidation-induced strain: a theoretical approach , 2000 .