Engineering ReRAM for high-density applications

Display Omitted Metal ion ReRAM are preferred due to the high window and low variability.Material/programming algorithm optimizations enable high endurance and retention.Fully integrated cell on a 16Gb chip at 27nm have been demonstrated.Several challenges are highlighted to enable sub-10µA reliable operations.Cross-point architectures could enable high-density but require adequate selector. Resistive random access memory (ReRAM) devices are emerging candidates for the next generation of nonvolatile high-density memory (Sills et al., 2014). The value proposition for this technology is bit alterability, high speed operation, long retention and high endurance. In addition, low-power and low-current operation is highly desirable for high-density memory systems targeting the growing mobile market. This paper presents various challenges in engineering a ReRAM cell suitable for high-density applications such as material selection, programming algorithms, noise issues and scaling path.

[1]  Alessandro Calderoni,et al.  A copper ReRAM cell for Storage Class Memory applications , 2014, 2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers.

[2]  Heng-Yuan Lee,et al.  A 4Mb embedded SLC resistive-RAM macro with 7.2ns read-write random-access time and 160ns MLC-access capability , 2011, 2011 IEEE International Solid-State Circuits Conference.

[3]  A. Calderoni,et al.  Performance comparison of O-based and Cu-based ReRAM for high-density applications , 2014, 2014 IEEE 6th International Memory Workshop (IMW).

[4]  Hyunsang Hwang,et al.  Demonstration of Low Power 3-bit Multilevel Cell Characteristics in a TaOx-Based RRAM by Stack Engineering , 2015, IEEE Electron Device Letters.

[5]  X. A. Tran,et al.  Self-rectifying and forming-free unipolar HfOx based-high performance RRAM built by fab-avaialbe materials , 2011, 2011 International Electron Devices Meeting.

[6]  Alessandro Calderoni,et al.  High-density reRAM for storage class memory , 2015, 2015 15th Non-Volatile Memory Technology Symposium (NVMTS).