论文信息 - Reliability Issues of MOS and Bipolar ICs (Invited Paper)

Reliability Issues of MOS and Bipolar ICs (Invited Paper)

Reliability issues affecting MOS and bipolar ICs are reviewed. Hot carrier induced degradation of MOS and bipolar circuits are used to illustrate the potential role of reliability CAD tools. Electromigration lifetimes under pulse DC and AC current stressing are longer than previously thought. Oxide breakdown offers a case study for accelerated test modeling, defect statistics, and bum-in optimization.

Chenming Hu | C. Hu

[1] J. Maiz. Characterization of electromigration under bidirectional (BC) and pulsed unidirectional (PDC) currents , 1989 .

[2] J. D. Burnett,et al. Modeling hot-carrier effects in polysilicon emitter bipolar transistors , 1988 .

[3] S. Aur. Kinetics of hot carrier effects for circuit simulation , 1989 .

[4] Jack C. Lee,et al. Modeling and characterization of gate oxide reliability , 1988 .

[5] M. H. Woods,et al. Reliability in MOS integrated circuits , 1984, 1984 International Electron Devices Meeting.

[6] Chenming Hu,et al. Projecting interconnect electromigration lifetime for arbitrary current waveforms , 1990 .

[7] K. Seki,et al. Circuit aging simulator (CAS) , 1988, Technical Digest., International Electron Devices Meeting.