Minority-carrier dynamics in semiconductors probed by two-photon microscopy
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[1] P. Haney,et al. Probing surface recombination velocities in semiconductors using two-photon microscopy. , 2016, Journal of applied physics.
[2] D. Levi,et al. Two dimensional numerical simulations of carrier dynamics during time-resolved photoluminescence decays in two-photon microscopy measurements in semiconductors , 2015 .
[3] D. Levi,et al. Charge-carrier transport and recombination in heteroepitaxial CdTe , 2014 .
[4] D. Kuciauskas,et al. Dependence of the minority-carrier lifetime on the stoichiometry of CdTe using time-resolved photoluminescence and first-principles calculations. , 2013, Physical review letters.
[5] Edward S. Barnard,et al. Probing carrier lifetimes in photovoltaic materials using subsurface two-photon microscopy , 2013, Scientific Reports.
[6] B. A. Foreman,et al. One- and two-photon-excited time-resolved photoluminescence investigations of bulk and surface recombination dynamics in ZnSe , 1998 .
[7] D. Dunlavy,et al. Minority‐carrier lifetime in AlxGa1−xAs , 1989 .
[8] G. W. Hooft,et al. Determination of bulk minority‐carrier lifetime and surface/interface recombination velocity from photoluminescence decay of a semi‐infinite semiconductor slab , 1986 .
[9] D. Bois,et al. Cathodoluminescence measurements of the minority‐carrier lifetime in semiconductors , 1977 .
[10] Frank Stern,et al. Photon recycling in semiconductor lasers , 1974 .