Low temperature deposition of carbon nanotubes

We introduce a novel method for low substrate temperature carbon nanotube (CNT) deposition utilizing photo-chemical vapor deposition (PCVD). Aluminum and nickel catalyst layers are deposited on thermally oxidized silicon substrates for CNT growth. The catalyst layers of varying thicknesses are deposited by electron beam evaporation. Different catalyst annealing temperatures and pressures are investigated. The CNT deposition is carried out immediately following the annealing process. The presence of light source during CNT deposition assists in fragmentation of the CCl4 precursor molecules used, thereby permitting a lower substrate temperature during growth. We have successfully deposited CNTs at substrate temperatures as low as 400 °C by this technique.

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