论文信息 - Compact modelling of pocket-implanted MOSFETs

Compact modelling of pocket-implanted MOSFETs

We show by device simulations and experiments, how a consistent modelling of both DC and AC characteristics for pocketimplanted MOSFETs can be achieved using a single value, which is extracted from measurements of in accumulation.

[1] N. Collaert,et al. Limitations of shift-and-ratio based L/sub eff/ extraction techniques for MOS transistors with halo or pocket implants , 2000, IEEE Electron Device Letters.