Electrical characterization of heterostructure lasers
暂无分享,去创建一个
[1] H. Casey,et al. Concentration‐dependent absorption and spontaneous emission of heavily doped GaAs , 1976 .
[2] W. Joyce,et al. Thermal resistance of heterostructure lasers , 1975 .
[3] H. M. Marcos,et al. Threshold reduction by the addition of phosphorus to the ternary layers of double‐heterostructure GaAs lasers , 1974 .
[4] T. Paoli,et al. Derivative measurements of the current-voltage characteristics of double-heterostructure injection lasers , 1976 .
[5] R. C. Miller,et al. Improved heterostructure‐laser light‐output linearity by antireflective coating , 1977 .
[6] T. Paoli. Theoretical derivatives of the electrical characteristic of a junction laser operated in the vicinity of threshold , 1978 .
[7] H. Casey,et al. Heterostructure lasers , 1978 .
[8] R. Dixon,et al. Improved light‐output linearity in stripe‐geometry double‐heterostructure (Al,Ga)As lasers , 1976 .
[9] W. Joyce,et al. Fundamental and harmonic response voltages of a sinusoidally current‐modulated ideal semiconductor laser , 1976 .
[10] T. Paoli. Nonlinearities in the emission characteristics of stripe-geometry (AlGa)As double-heterostructure junction lasers , 1976 .
[11] B. Miller,et al. GaAs–AlxGa1−xAs Double Heterostructure Lasers—Effect of Doping on Lasing Characteristics of GaAs , 1972 .
[12] Thomas L. Paoli,et al. Saturation of the junction voltage in stripe‐geometry (AlGa)As double‐heterostructure junction lasers , 1976 .
[13] K. Konnerth,et al. DELAY BETWEEN CURRENT PULSE AND LIGHT EMISSION OF A GALLIUM ARSENIDE INJECTION LASER , 1964 .
[14] C. Sah,et al. Carrier Generation and Recombination in P-N Junctions and P-N Junction Characteristics , 1957, Proceedings of the IRE.
[15] H. Haug. Quantum-Mechanical Rate Equations for Semiconductor Lasers , 1969 .
[16] W. Joyce. Analytic approximations for the Fermi energy in (Al,Ga)As , 1978 .
[17] Charles Howard Henry,et al. The effect of surface recombination on current in AlxGa1−xAs heterojunctions , 1978 .
[18] W. B. Joyce,et al. Classical-particle description of photons and phonons , 1974 .
[19] J. Dyment,et al. Optimum Stripe Width for Continuous Operation of GaAs Junction Lasers , 1969 .
[20] R. W. Dixon,et al. Derivative measurements of light-current-voltage characteristics of (AL, GA)as double-heterostructure lasers , 1976, The Bell System Technical Journal.
[21] Frank Stern,et al. Calculated spectral dependence of gain in excited GaAs , 1976 .
[22] T. Paoli. Observation of second derivatives of the electrical characteristics of double-heterostructure junction lasers , 1976, IEEE Transactions on Electron Devices.
[23] B. W. Hakki,et al. Carrier and gain spatial profiles in GaAs stripe geometry lasers , 1973 .