A manufacturable integration technology of sputter-BST capacitor with a newly proposed thick Pt electrode

A novel process technology to realize a thick Pt bottom electrode is developed, particularly for facilitating the use of sputter-BST capacitors. The sputter-BST capacitor fabricated with this technology gives a production-worthy yield and maintains initial electrical properties after finishing the back-end process, including the Al wiring and the plasma SiN-passivation. By using this technology, it is feasible to obtain a reliable BST capacitor in the 0.16 /spl mu/m-geometry, with the achievement of BST's Teq, SiO/sub 2/-equivalent thickness, of 0.40 nm and a 300 nm-high bottom electrode.