论文信息 - Properties of Atomic Layer Deposited HfO2 Films on Ge Substrates Depending on Process Temperatures - 字舞流文

Properties of Atomic Layer Deposited HfO2 Films on Ge Substrates Depending on Process Temperatures

Jae Hyuck Jang | C. Hwang | N. Lee | Sang Young Lee | D. Cho | Jinho Park | Joohwi Lee | T. Park | Jung-Hae Choi | Y. Chung | Hyo Kyeom Kim | I. Yu | S. Jeon | H. Jung