Oxide-field dependence of electron injection from silicon into silicon dioxide

The problem of electron injection from silicon into silicon dioxide is considered by means of a physical approach based on a simple model that provides good agreement with experimental data for MOS structures. The model implements the calculation of the electron energy distribution at the Si-SiO/sub 2/ interface by means of an efficient nonlocal algorithm, thus making possible a consistent treatment of the tunneling of hot electrons across the oxide. The oxide-field dependence of electron injection is addressed and the relationship between barrier lowering and electron energy distributions is discussed. >

[1]  M. Lenzlinger,et al.  Fowler‐Nordheim Tunneling into Thermally Grown SiO2 , 1969 .

[2]  Chen Yu-zhang,et al.  Numerical simulation of avalanche hot-carrier injection in short-channel MOSFET's , 1988 .

[3]  N. Goldsman,et al.  Electron energy distribution for calculation of gate leakage current in MOSFETs , 1988 .

[4]  Jordi Suñé,et al.  Self-consistent solution of the Poisson and Schrödinger equations in accumulated semiconductor-insulator interfaces , 1991 .

[5]  B. Riccò,et al.  A many-band silicon model for hot-electron transport at high energies , 1989 .

[6]  R. Brunetti,et al.  An improved impact‐ionization model for high‐energy electron transport in Si with Monte Carlo simulation , 1991 .

[7]  A. Modelli,et al.  Valence band electron tunneling in metal-oxide-silicon structures , 1987 .

[8]  Takahiro Iizuka,et al.  Carrier transport simulator for silicon based on carrier distribution function evolutions , 1990 .

[9]  B. Meinerzhagen.  Consistent gate and substrate current modeling based on energy transport and the lucky electron concept , 1988, Technical Digest., International Electron Devices Meeting.

[10]  Tak H. Ning,et al.  Emission probability of hot electrons from silicon into silicon dioxide , 1977 .

[11]  Karl Hess,et al.  Theory of hot electron emission from silicon into silicon dioxide , 1983 .

[12]  B. Riccò,et al.  Modeling of high energy electrons in n-MOSFETs , 1991, International Electron Devices Meeting 1991 [Technical Digest].

[13]  B. Riccò,et al.  Simple and efficient modeling of EPROM writing , 1991 .

[14]  B. Riccò,et al.  Efficient non-local modeling of the electron energy distribution in sub-micron MOSFETs , 1990, International Technical Digest on Electron Devices.

[15]  C. N. Berglund,et al.  Photoinjection into SiO2: Electron Scattering in the Image Force Potential Well , 1971 .

[16]  Z. Weinberg,et al.  On tunneling in metal‐oxide‐silicon structures , 1982 .

[17]  C. Fiegna,et al.  Modeling of high-energy electrons in MOS devices at the microscopic level , 1993 .