A New Single-Layer Resist for 193-nm Lithography

A positive chemically amplified resist for 193-nm lithography has been developed. The resist consists of a copolymer of tetrahydro-4-methyl-2-oxo- 2H-pyran-4-yl methacrylate and 2-methyl-2-adamantyl methacrylate and a photoacid generator. The acid-catalyzed deprotection of the protective groups leads to a large polarity change in the exposed region of the resist films and it allows for high-contrast patterning with high sensitivity. Using an ArF excimer laser exposure system, a 0.17-µ m lines and spaces pattern has been resolved.