Channel Hot Carrier Degradation Mechanism in Long/Short Channel $n$-FinFETs

The channel hot carrier degradation mechanisms in n-FinFET devices are studied. In long channel devices, interface degradation by hot carriers mainly degrades the device at the maximum impact ionization condition (V<sub>G</sub> ~ V<sub>D</sub>/2). At higher V<sub>G</sub> closer to V<sub>D</sub>, cold and hot carrier injection to the oxide bulk defect increases and dominates at the V<sub>G</sub>=V<sub>D</sub> stress condition. On the other hand, in short channel devices, hot carriers are generated continuously with respect to V<sub>G</sub> and highly at V<sub>G</sub>=V<sub>D</sub>, and this hot carrier injection into the oxide bulk defect is the main degradation mechanism.

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