Dependence of current–voltage characteristics of pseudomorphic AlAs/In0.53Ga0.47As/InAs resonant tunnelling diodes on quantum well widths
暂无分享,去创建一个
Zeng Yiping | Zhang Yang | Zhang Yu | Zeng Yiping | Zhang Yu | Zhang Yang
[1] Safumi Suzuki,et al. Experimental and Theoretical Characteristics of Sub-Terahertz and Terahertz Oscillations of Resonant Tunneling Diodes Integrated with Slot Antennas , 2005 .
[2] L. Esaki,et al. Tunneling in a finite superlattice , 1973 .
[3] T. C. McGill,et al. Oscillations up to 712 GHz in InAs/AlSb resonant‐tunneling diodes , 1991 .
[4] Safumi Suzuki,et al. One THz harmonic oscillation of resonant tunneling diodes , 2005 .
[5] Javier Gozalvez,et al. Channel allocation mechanisms for improving QoS in packet mobile radio networks , 2005 .
[6] Gao Jianfeng,et al. Influence of spacer layer thickness on the current-voltage characteristics of pseudomorphic AlAs/In0.53Ga0.47As/InAs resonant tunnelling diodes , 2008 .
[7] 杨富华,et al. Nanoelectronic devices?resonant tunnelling diodes grown on InP substrates by molecular beam epitaxy with peak to valley current ratio of 17 at room temperature , 2006 .
[8] 王宝强,et al. Observation of the current–voltage plateau-like structure of resonant tunnelling diode with prewells under different magnetic fields , 2004 .
[9] R. Bouregba,et al. Frequency multiplication using resonant tunnelling diode with output at submillimetre wavelengths , 1990 .
[10] M. Reddy,et al. Monolithic Schottky-collector resonant tunnel diode oscillator arrays to 650 GHz , 1997, IEEE Electron Device Letters.