Coplanar lumped electroabsorption modulator fabricated on the common n-type InP substrate

A coplanar lumped electroabsorption modulator (Co-LEAM) based on n-type InP substrate is designed and fabricated, which shows a capacitance of 0.62 pF and a high reverse breakdown voltage (VBR) nearly -26 v. Other characteristics are compared with the common LEAM with the back n-electrode.

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