Impurity bound-to-unbound terahertz sensors based on beryllium and silicon δ-doped GaAs∕AlAs multiple quantum wells
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E. Linfield | P. Harrison | D. Seliuta | G. Valušis | S. Khanna | M. Lachab | B. Čechavičius | S. Balakauskas | M. Halsall | J. Kavaliauskas | B. Sherliker