A MIS transistor using the nucleation surface of polycrystalline diamond
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Margarida C. Coelho | G. Cabral | J. J. Gracio | J. C. Madaleno | Elby Titus | Guilherme Lavareda | Luiz Pereira | A. Amaral | G. Lavareda | J. Gracio | G. Cabral | E. Titus | L. Pereira | M. Coelho | N. Carvalho | A. Amaral | N. Carvalho
[1] E. Obermeier,et al. Space-charge-limited current flow and trap density in undoped diamond films , 1993 .
[2] B. Fiegl,et al. EVIDENCE FOR GRAIN BOUNDARY HOPPING TRANSPORT IN POLYCRYSTALLINE DIAMOND FILMS , 1994 .
[3] A. Vescan,et al. High-temperature, high-voltage operation of pulse-doped diamond MESFET , 1997, IEEE Electron Device Letters.
[4] D. Kerns,et al. PECVD diamond-based high performance power diodes , 2005, IEEE Transactions on Power Electronics.
[5] H. Kawarada,et al. Characterization of hydrogen-terminated CVD diamond surfaces and their contact properties , 1994 .
[6] E. Kohn,et al. RF performance of surface channel diamond FETs with sub-micron gate length , 2002 .
[7] R. Jackman,et al. Enhancement mode metal-semiconductor field effect transistors from thin-film polycrystalline diamond , 1998, IEEE Electron Device Letters.
[8] Naoki Kobayashi,et al. Influence of epitaxy on the surface conduction of diamond film , 2004 .
[9] J. C. Madaleno,et al. Comparison of the electrical behavior of Schottky diodes built on the nucleation and growth surfaces of polycrystalline diamond , 2007 .
[10] Richard B. Jackman,et al. High carrier mobility in polycrystalline thin film diamond , 1998 .
[11] H. Gomes,et al. Microelectrical characterisation of diamond films: an attempt to understand the structural influence on electrical transport phenomena , 2000 .