Challenges of accurate gate length characterization with emphasis on the effects of intra-die thermal variation

[1]  H. Kimura,et al.  RTA-Driven Intra-Die Variations in Stage Delay, and Parametric Sensitivities for 65nm Technology , 2006, 2006 Symposium on VLSI Technology, 2006. Digest of Technical Papers..

[2]  Yuan Taur,et al.  MOSFET channel length: extraction and interpretation , 2000 .

[3]  K. Bernstein,et al.  Scaling, power, and the future of CMOS , 2005, IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest..

[4]  K.J. Kuhn,et al.  Reducing Variation in Advanced Logic Technologies: Approaches to Process and Design for Manufacturability of Nanoscale CMOS , 2007, 2007 IEEE International Electron Devices Meeting.

[5]  B. Sheu,et al.  A capacitance method to determine channel lengths for conventional and LDD MOSFET's , 1984, IEEE Electron Device Letters.

[6]  Scott Halle,et al.  Meeting critical gate linewidth control needs at the 65 nm node , 2006, SPIE Advanced Lithography.

[7]  N. Kasai,et al.  Electrical gate length measurement test structure for short channel MOSFET characteristics evaluation , 1995, Proceedings International Conference on Microelectronic Test Structures.

[8]  P. Bai,et al.  An advanced low power, high performance, strained channel 65nm technology , 2005, IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest..

[9]  R. Allen,et al.  A new test structure for the electrical measurement of the width of short features with arbitrarily wide voltage taps , 1992, IEEE Electron Device Letters.

[10]  D. Schroder Semiconductor Material and Device Characterization , 1990 .

[11]  R. Shrivastava,et al.  A simple model for the overlap capacitance of a VLSI MOS device , 1982, IEEE Transactions on Electron Devices.

[12]  N. Acharya,et al.  Challenges for ultra-shallow junction formation technologies beyond the 90 nm node , 2003, 11th IEEE International Conference on Advanced Thermal Processing of Semiconductors. RTP 2003.

[13]  M.B. Ketchen,et al.  Ring oscillators for CMOS process tuning and variability control , 2006, IEEE Transactions on Semiconductor Manufacturing.