0.18 /spl mu/m SiGe BiCMOS technology for wireless and 40 Gb/s communication products

A 0.18 /spl mu/m SiGe BiCMOS process optimized for wireless and 40 Gb/s networking applications is described. Bipolar performance of 130 GHz (F/sub t/) and 150 GHz (F/sub max/) is reported. Exceptional LNA characteristics have been measured with 2.5 GHz NF/sub min/ of 0.83 dB and MAG of 19.7 dB drawing only 1.5 mA of collector current. A metal thin-film resistor, metal-insulator-metal capacitor and two layers of thick Cu help provide low-loss passive components.