A 1.8 GHz SiGe HBT VCO using 0.5㎛ BiCMOS Process

In this paper, we fabricated an 1.8 GHz differential VCO using a commercial 0.5 ㎛ SiGe BiCMOS process technology. The fabricated VCO consumes 16 mA at 3 V supply voltage and has a 1.2×1.6 ㎟ chip area. A phase noise measured at 100 kHz offset carrier is - 110 dBc/Hz and a tuning range is 1795 MHz∼1910 MHz when two varactor diodes are biased from 0 V to 3 V.