A 28 nm Configurable Memory (TCAM/BCAM/SRAM) Using Push-Rule 6T Bit Cell Enabling Logic-in-Memory
暂无分享,去创建一个
David Blaauw | Dennis Sylvester | Supreet Jeloka | Naveen Akesh | D. Blaauw | D. Sylvester | Supreet Jeloka | Naveen Akesh
[1] Katherine Yelick,et al. A Case for Intelligent RAM: IRAM , 1997 .
[2] Katherine Yelick,et al. A Case for Intelligent DRAM: IRAM , 1998 .
[3] William J. Dally,et al. Smart Memories: a modular reconfigurable architecture , 2000, ISCA '00.
[4] G. Edward Suh,et al. Embedded intelligent SRAM , 2003, Proceedings 2003. Design Automation Conference (IEEE Cat. No.03CH37451).
[5] Ali Sheikholeslami,et al. A ternary content-addressable memory (TCAM) based on 4T static storage and including a current-race sensing scheme , 2003, IEEE J. Solid State Circuits.
[6] M. Horowitz,et al. Architecture and circuit techniques for a reconfigurable memory block , 2004, 2004 IEEE International Solid-State Circuits Conference (IEEE Cat. No.04CH37519).
[7] K. Pagiamtzis,et al. Content-addressable memory (CAM) circuits and architectures: a tutorial and survey , 2006, IEEE Journal of Solid-State Circuits.
[8] Chingwei Yeh,et al. High-Speed and Low-Power Design Techniques for TCAM Macros , 2008, IEEE Journal of Solid-State Circuits.
[9] Shoji Ikeda,et al. MTJ-based nonvolatile logic-in-memory circuit, future prospects and issues , 2009, 2009 Design, Automation & Test in Europe Conference & Exhibition.
[10] Yesh Kolla,et al. A 45nm CMOS 13-port 64-word 41b fully associative content-addressable register file , 2010, 2010 IEEE International Solid-State Circuits Conference - (ISSCC).
[11] Chua-Chin Wang,et al. A Self-Disabled Sensing Technique for Content-Addressable Memories , 2010, IEEE Transactions on Circuits and Systems II: Express Briefs.
[12] Sanu Mathew,et al. A 128×128b high-speed wide-and match-line content addressable memory in 32nm CMOS , 2011, 2011 Proceedings of the ESSCIRC (ESSCIRC).
[13] Wei Hwang,et al. A 65 nm 0.165 fJ/Bit/Search 256 $\,\times\,$144 TCAM Macro Design for IPv6 Lookup Tables , 2011, IEEE Journal of Solid-State Circuits.
[14] Byung-Do Yang,et al. A Low Power Content Addressable Memory Using Low Swing Search Lines , 2011, IEEE Transactions on Circuits and Systems I: Regular Papers.
[15] Peilin Song,et al. 1Mb 0.41 µm2 2T-2R cell nonvolatile TCAM with two-bit encoding and clocked self-referenced sensing , 2013, 2013 Symposium on VLSI Circuits.
[16] Hiroyuki Kawai,et al. A 250-MHz 18-Mb Full Ternary CAM With Low-Voltage Matchline Sensing Scheme in 65-nm CMOS , 2013, IEEE Journal of Solid-State Circuits.
[17] R. Ranica,et al. FDSOI process/design full solutions for ultra low leakage, high speed and low voltage SRAMs , 2013, 2013 Symposium on VLSI Technology.
[18] Kiat Seng Yeo,et al. Design of a power-efficient CAM using automated background checking scheme for small match line swing , 2013, 2013 Proceedings of the ESSCIRC (ESSCIRC).
[19] Igor Arsovski,et al. A 32 nm 0.58-fJ/Bit/Search 1-GHz Ternary Content Addressable Memory Compiler Using Silicon-Aware Early-Predict Late-Correct Sensing With Embedded Deep-Trench Capacitor Noise Mitigation , 2013, IEEE Journal of Solid-State Circuits.
[20] Franz Franchetti,et al. A 3D-stacked logic-in-memory accelerator for application-specific data intensive computing , 2013, 2013 IEEE International 3D Systems Integration Conference (3DIC).
[21] Koji Nii,et al. 13.6 A 28nm 400MHz 4-parallel 1.6Gsearch/s 80Mb ternary CAM , 2014, 2014 IEEE International Solid-State Circuits Conference Digest of Technical Papers (ISSCC).
[22] Hayashi Isamu,et al. A 28nm 400MHz 4-Parallel 1.6Gsearch/s 80Mb Ternary CAM , 2014 .
[23] Jing Li,et al. 1 Mb 0.41 µm² 2T-2R Cell Nonvolatile TCAM With Two-Bit Encoding and Clocked Self-Referenced Sensing , 2014, IEEE Journal of Solid-State Circuits.
[24] David Blaauw,et al. A configurable TCAM/BCAM/SRAM using 28nm push-rule 6T bit cell , 2015, 2015 Symposium on VLSI Circuits (VLSI Circuits).
[25] Kenneth C. Smith,et al. Through the Looking Glass?The 2015 Edition: Trends in Solid-State Circuits from ISSCC , 2015, IEEE Solid-State Circuits Magazine.