A high-resolution silicon drift chamber for X-ray spectroscopy

Abstract Silicon drift chambers are very attractive detectors for X-ray fluorescence excitation spectroscopy (between 1 and 15 keV) due to their ultra low capacitance (typically 200 fF) which is also independent of the detector active area. High-energy resolution can be obtained while preserving a large solid detection angle. We have designed a new silicon drift chamber for X-ray spectroscopy. The active area is 1 cm 2 , the measured energy resolution is 143 eV FWHM for the Kα line of Mn (5.89 keV). This detector has also been used to characterize the spectral line shape of the emission of a standard planar undulator installed on the ESRF 6 GeV storage ring.