论文信息 - P‐N JUNCTIONS IN GaP WITH EXTERNAL ELECTROLUMINESCENCE EFFICIENCY ∼2% AT 25°C

P‐N JUNCTIONS IN GaP WITH EXTERNAL ELECTROLUMINESCENCE EFFICIENCY ∼2% AT 25°C

The external electroluminescent quantum efficiency at 25°C of GaP p‐n junctions grown by liquid‐phase epitaxy on solution‐grown substrates may be increased by as much as an order of magnitude by annealing, after growth, at temperatures in the range 400°C–725°C for times ∼16 hr. Typical efficiencies obtained range from 1–2%. The I‐V characteristic consists of two parallel components: a small tunneling current and a recombination current in the space charge region. The effect of annealing is to increase the efficiency in proportion to the decrease in current, at a given bias.

R. A. Logan | H. G. White | R. Logan | F. Trumbore | F. A. Trumbore

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