Changing the Excess Lead Oxide Content in Thin PZT Films with Increasing Annealing Temperature

An accuracy of elemental composition of submicron PZT films was investigated using nondestructive method of the electron probe X-ray microanalysis based on energy dispersive analyzer. PZT films RF-magnetron sputtered on Pt/SiO2/Si substrate were annealed to create the perovskite phase in the temperature range of 530-570°C. Unusual changes of lead content at elevated annealing temperatures were observed. The variation of incident angle of probing electrons was used to evaluate qualitatively lead excess on the film depth. Mechanisms of perovskite phase formation in the films are discussed.

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