论文信息 - A reliability methodology for low temperature data retention in floating gate non-volatile memories

A reliability methodology for low temperature data retention in floating gate non-volatile memories

A reliability assessment methodology consisting of a statistical model and designed experiments to evaluate the leakage mechanism responsible for low temperature data retention (LTDR) in floating gate nonvolatile memories is presented. The nature of the leakage mechanism and the methodology necessary to observe and accurately assess this phenomenon are described.

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