论文信息 - Intermodulation analysis of FET resistive mixers using Volterra series

Intermodulation analysis of FET resistive mixers using Volterra series

We have implemented the Volterra-series method to analyze intermodulation (IM) distortion in FET resistive mixers. The nonlinearities of the channel conductance of a NE71000 MESFET and a NE32400 HFET were first characterized using a low-frequency harmonic power measurement. The data was then used in a simulation program and results for two-tone IM distortion in X-band were compared with the measured data for both MESFET and HFET resistive mixer circuits. Very good agreement was achieved in each case. We have also shown by simulation that the two separate contributions to the third-order IM distortion from the mixing between the input signals themselves and the mixing between the input signals and the second-order mixing products have a very strong cancellation, which results in the low IM distortion in the FET resistive mixers observed in measurements.

P.J. McCleer | S. Peng | G.I. Haddad

[1] S. Maas. Two-Tone Intermodulation in Diode Mixers , 1987 .

[2] D. Neilson,et al. Modeling MESFETs for intermodulation analysis of mixers and amplifiers , 1990, IEEE International Digest on Microwave Symposium.

[3] G. I. Haddad,et al. Nonlinear models for the intermodulation analysis of FET mixers , 1995 .

[4] S. Maas. A GaAs MESFET Mixer with Very Low Intermodulation , 1987 .

[5] S. Maas,et al. Modeling MESFETs for intermodulation analysis of mixers and amplifiers , 1990 .

[6] J.C. Pedro,et al. An improved MESFET model for prediction of intermodulation load-pull characterization , 1992, 1992 IEEE Microwave Symposium Digest MTT-S.

[7] S.A. Maas,et al. Modeling MESFETs for intermodulation analysis of resistive FET mixers , 1995, Proceedings of 1995 IEEE MTT-S International Microwave Symposium.