论文信息 - Impact of Substrate Biasing During AlN Growth by PEALD on Al2O3/AlN/GaN MOS Capacitors - 字舞流文

Impact of Substrate Biasing During AlN Growth by PEALD on Al2O3/AlN/GaN MOS Capacitors

M. Charles | R. Gwoziecki | C. Le Royer | T. Baron | M. Legallais | B. Salem | M. Plissonnier | F. Bassani | B. Pélissier | L. Vauche | G. Lefévre | S. Labau | W. Vandendaele | S. Martin