论文信息 - Si (111) surface cleaning using atomic hydrogen and SiH2 studied using reflection high‐energy electron diffraction

Si (111) surface cleaning using atomic hydrogen and SiH2 studied using reflection high‐energy electron diffraction

The Si(111) wafer covered by a thin protective oxide layer was cleaned in disilane gas source Si molecular‐beam epitaxy chamber. The effect of the electron cyclotron resonance (ECR) cracked/uncracked disilane or hydrogen irradiation on the initial surface cleaning was studied by observing the reflection high‐energy electron diffraction pattern change. The ECR‐cracked disilane irradiation was the most effective for lowering the cleaning temperature and the surface cleaning was achieved at 680 °C. The uncracked disilane and the ECR‐cracked hydrogen irradiation were also effective for lowering the cleaning temperature. The uncracked hydrogen irradiation has no effect for lowering the cleaning temperature. The SiH2 and H were main species of the ECR‐cracked disilane and these played important roles in the cleaning process.

Toru Tatsumi | Hiroyuki Hirayama | T. Tatsumi | H. Hirayama

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