Review of compound semiconductor devices for RF power applications
暂无分享,去创建一个
[1] T. Tanaka,et al. A novel fabrication process of surface via-holes for GaAs power FETs , 1998, GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 20th Annual. Technical Digest 1998 (Cat. No.98CH36260).
[2] N. Iwata,et al. 3 V operation L-band power double-doped heterojunction FETs , 1993, 1993 IEEE MTT-S International Microwave Symposium Digest.
[3] T.J. Smith,et al. Wide bandgap semiconductor devices and MMICs for RF power applications , 2001, International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224).
[4] Kazuki Tateoka,et al. A GaAs MCM power amplifier of 3.6 V operation with high efficiency of 49% for 0.9 GHz digital cellular phone systems , 1995 .
[5] M. Nakamura,et al. A compact, high efficiency, 120 Watts GaAs power amplifier module for the 3rd generation cellular base stations , 1999, 1999 IEEE MTT-S International Microwave Symposium Digest (Cat. No.99CH36282).
[6] Kazuki Tateoka,et al. A GaAs MCM power amplifier of 3.6 V operation with high efficiency of 49% for 0.9 GHz digital cellular phone systems , 1994, 1994 IEEE MTT-S International Microwave Symposium Digest (Cat. No.94CH3389-4).
[8] Daisuke Ueda,et al. Frequency dispersion and modulated signal distortion characteristics of gaas power MESFETs at large signal operation , 1994 .
[9] D. Ueda,et al. 0.15 /spl mu/m T-shaped gate fabrication for GaAs MODFET using phase shift lithography , 1996 .
[10] J. Harbison,et al. DC and AC characteristics of delta-doped GaAs FET , 1989, IEEE Electron Device Letters.
[11] Salah M. Bedair,et al. Two-dimensional analysis of short-channel delta-doped GaAs MESFETs , 1992 .
[12] Y. Ikeda,et al. Novel high drain breakdown voltage AlGaN/GaN HFETs using selective thermal oxidation process , 2000, International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138).
[13] K. Fujii,et al. A 100 W S-band AlGaAs/GaAs hetero-structure FET for base stations of wireless personal communications , 1998, GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 20th Annual. Technical Digest 1998 (Cat. No.98CH36260).