Review of compound semiconductor devices for RF power applications

The progress of RF power devices based on compound semiconductor materials (represented here by GaAs) are reviewed. Two major applications of those devices are handy terminals and base stations. The highest power-added-efficiency is the major concern for the mobile terminals, while the latter requires high power transmitting capability with sufficient linearity. Compound semiconductor devices are suited for those applications. This paper reviews recent developments in these RF power devices.

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