论文信息 - Low frequency noise in 4H-SiC BJTs

Low frequency noise in 4H-SiC BJTs

Low frequency noise in 4H-SiC BJTs with the current gain β ≈ 10-15 and unity current gain frequency fT of about 1.5 GHz has been investigated. The corner frequency fc was found to be fc = 2×104 Hz. The value of the coefficient KB, which is the figure of merit for the low frequency noise in the region of noise proportional to squared current, was found to be 6×10-7 μm2. This value is only an order of magnitude higher than the typical values for high-frequency Si-BJTs.

[1] C. Delseny,et al. Excess noise in AlGaAs/GaAs heterojunction bipolar transistors and associated TLM test structures , 1994 .

[2] A. Agarwal,et al. 4H–SiC p–n diodes and gate turnoff thyristors for high-power, high-temperature applications , 2000 .

[3] R. Singh,et al. 1800 V NPN bipolar junction transistors in 4H-SiC , 2001, IEEE Electron Device Letters.

[4] M. Shur,et al. Low-frequency noise in Al0.4Ga0.6N-based Schottky barrier photodetectors , 2001 .

[5] R. Gutmann,et al. Simulation, characterization and design of epitaxial emitter NPN 4H-SiC BJTs for amplifier applications , 2002, Proceedings. IEEE Lester Eastman Conference on High Performance Devices.

[6] T.G.M. Kleinpenning,et al. On 1/f mobility fluctuations in bipolar transistors , 1986 .

[7] G. Trefán,et al. A REVIEW OF 1/f NOISE IN TERMS OF MOBILITY FLUCTUATIONS AND WHITE NOISE IN MODERN SUBMICRON BIPOLAR TRANSISTORS — BJTs AND HBTs , 2001 .

[8] Pavel Ivanov,et al. Carrier lifetime measurements in 10 kV 4H-SiC diodes , 2003 .

[9] T.G.M. Kleinpenning,et al. Low-frequency noise in modern bipolar transistors: impact of intrinsic transistor and parasitic series resistances , 1994 .

[10] J. Richmond,et al. High-Temperature Performance of 10 Kilovolts, 200 Amperes (Pulsed) 4H-SiC PiN Rectifiers , 2002 .