Large area, 1.3 kV, 17 A, bipolar junction transistors in 4H-SiC

In this paper, high performance, high voltage NPN bipolar junction transistors in 4H-SiC are presented for applications in low frequency (<5 MHz) power conversion systems. The power BJTs for low frequency switching applications were designed to block 1300 V and showed a specific on-resistance of 8.0 mohm-cm/sup 2/, which outperforms all SiC power switching devices ever reported. Moreover, these transistors show a positive temperature coefficient in the on-resistance and a negative temperature coefficient in the current gain, which enable easy paralleling of the devices.

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