High Performance 1.55 µm Quantum-Well Metal-Clad Ridge-Waveguide Distributed Feedback Lasers

We present results on high performance 1.55 µm InGaAs/InGaAsP multiple quantum well metal-clad ridge-waveguide distributed feedback lasers. The multilayer structure was grown entirely by low pressure metal-organic vapor phase epitaxy. For improved high speed modulation a small-area contact mask was used. As a result the following characteristics were obtained on the same device: 38 mW single-mode output power with a 3dB-bandwidth of 11 GHz and a linewidth of 3.5 MHz. Best values for the individual parameters are 71 mW, 11 GHz and 880 kHz.