论文信息 - Growth of high-quality epitaxy of GaAs on Si with engineered Ge buffer using MOCVD - 字舞流文

Growth of high-quality epitaxy of GaAs on Si with engineered Ge buffer using MOCVD

Guilei Wang | H. Radamson | Wenwu Wang | Buqing Xu | Ben Li | Z. Kong | Jiahan Yu | Junjie Li | Shihai Gu | G. Bai | Y. Du