Amorphous Silicon Photoconductive Sensor

Photoconductive sensitivity and transient properties of non-doped and doped a-Si: H films were investigated. The non-exponential decays of photoconductivity were discussed using a dispersive diffusion limited recombination model. Doping effects on sensitivity and transient behaviors were also investigated. Phosphorus and boron dopings drastically reduced the pulsed light responsitivity. A photoconductive sensor array was fabricated and the performance was compared with that of CdS photosensors.