论文信息 - Film properties of MoSi2and their application to self-aligned MoSi2gate MOSFET

Film properties of MoSi2and their application to self-aligned MoSi2gate MOSFET

Molybdenum silicide (MoSi<inf>2</inf>) gate technology has been extensively investigated in conjunction with MOS device performance and reliability. Features of the MoSi<inf>2</inf>gate technology are to realize a low resistivity of 1 × 10<sup>-4</sup>Ω . cm for both gate and interconnection, and to give rise to higher reliability under both positive and negative bias stress of 2 MV/cm at 250° C. Problems on the ohmic contact between MoSi<inf>2</inf>and single-crystal substrates are not completely solved yet, particularly when the device is processed at high temperature after MoSi<inf>2</inf>deposition.

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