A Compact and Accurate Temperature-Dependent Model for CMOS Circuit Delay

With ever increasing power density and temperature variations within chips, it is very important to correctly model temperature effects on the devices in a compact way. In this paper, it is first shown that the temperature dependencies of the mobility and the saturation velocity need to be treated separately in modeling the current with temperature effects. Then, a new compact temperature-dependent model is presented for the on-current and transient behavior of a CMOS inverter based on the alpha-power law. The proposed model is shown to have an excellent agreement with BSIM3.

[1]  C. Hu,et al.  Modelling temperature effects of quarter micrometre MOSFETs in BSIM3v3 for circuit simulation , 1997 .

[2]  A.H.M. Shousha,et al.  A generalized tanh law MOSFET model and its applications to CMOS inverters , 1993 .

[3]  Kouichi Kanda,et al.  Design impact of positive temperature dependence of drain current in sub 1 V CMOS VLSIs , 1999 .

[4]  Changhae Park,et al.  Reversal of temperature dependence of integrated circuits operating at very low voltages , 1995, Proceedings of International Electron Devices Meeting.

[5]  Yu Cao,et al.  New paradigm of predictive MOSFET and interconnect modeling for early circuit simulation , 2000, Proceedings of the IEEE 2000 Custom Integrated Circuits Conference (Cat. No.00CH37044).

[6]  James Tschanz,et al.  Parameter variations and impact on circuits and microarchitecture , 2003, Proceedings 2003. Design Automation Conference (IEEE Cat. No.03CH37451).

[7]  S. Selberherrb,et al.  A temperature dependent model for the saturation velocity in semiconductor materials , 2022 .

[8]  Jean Michel Daga,et al.  Temperature effect on delay for low voltage applications [CMOS ICs] , 1998, Proceedings Design, Automation and Test in Europe.

[9]  Mohamed A. Osman,et al.  An extended Tanh law MOSFET model for high temperature circuit simulation , 1995 .

[10]  Yuan Taur,et al.  Fundamentals of Modern VLSI Devices , 1998 .

[11]  A. R. Newton,et al.  Alpha-power law MOSFET model and its applications to CMOS inverter delay and other formulas , 1990 .

[12]  T. Chan,et al.  Experimental characterization and modeling of electron saturation velocity in MOSFETs inversion layer from 90 to 350 K , 1990, IEEE Electron Device Letters.

[13]  Vivek De,et al.  Low power and high performance design challenges in future technologies , 2000, ACM Great Lakes Symposium on VLSI.

[14]  Kiyoo Itoh,et al.  Supply voltage scaling for temperature insensitive CMOS circuit operation , 1998 .

[15]  S. M. Sze,et al.  Physics of semiconductor devices , 1969 .

[16]  Saibal Mukhopadhyay,et al.  Leakage current mechanisms and leakage reduction techniques in deep-submicrometer CMOS circuits , 2003, Proc. IEEE.

[17]  Vivek De,et al.  Technology and design challenges for low power and high performance [microprocessors] , 1999, Proceedings. 1999 International Symposium on Low Power Electronics and Design (Cat. No.99TH8477).