A Statistical Model for Assessing the Fault Tolerance of Variable Switching Currents for a 1Gb Spin Transfer Torque Magnetoresistive Random Access Memory
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Akihiro Nitayama | Hiroaki Yoda | Tatsuya Kishi | Yoshiaki Asao | Sumio Ikegawa | Kenji Tsuchida | Hisanori Aikawa | Masayoshi Iwayama | A. Nitayama | T. Kishi | S. Ikegawa | H. Yoda | H. Aikawa | K. Tsuchida | Y. Asao | M. Iwayama
[1] M. Hosomi,et al. A novel nonvolatile memory with spin torque transfer magnetization switching: spin-ram , 2005, IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest..
[2] A. Nitayama,et al. Reduction of switching current distribution in spin transfer magnetic random access memories , 2008 .
[3] Hiroaki Yoda,et al. Estimation of spin transfer torque effect and thermal activation effect on magnetization reversal in CoFeB∕MgO∕CoFeB magnetoresistive tunneling junctions , 2007 .
[4] H. Ohno,et al. A novel SPRAM (SPin-transfer torque RAM) with a synthetic ferrimagnetic free layer for higher immunity to read disturbance and reducing write-current dispersion , 2007, 2007 IEEE Symposium on VLSI Technology.
[5] Hiroshi Kano,et al. Thermal activation effect on spin transfer switching in magnetic tunnel junctions , 2005 .
[6] Saied N. Tehrani,et al. Thermally activated magnetization reversal in submicron magnetic tunnel junctions for magnetoresistive random access memory , 2002 .
[7] D. Ralph,et al. Adjustable spin torque in magnetic tunnel junctions with two fixed layers , 2005, cond-mat/0503376.
[8] M. Sharrock,et al. Measurement and interpretation of magnetic time effects in recording media , 1999 .
[9] Z. Diao,et al. Spin transfer switching current reduction in magnetic tunnel junction based dual spin filter structures , 2005 .