ELECTRICAL DERIVATIVE CHARACTERISTICS OF ION-IMPLANTED AlGaInP/GaInP MULTI-QUANTUM WELL LASERS
暂无分享,去创建一个
Jinn-Kong Sheu | Yan-Kuin Su | Gou-Chung Chi | Shoou-Jinn Chang | Kai-Bin Lin | Chia-Cheng Liu | Chien-Chia Chiu
[1] T. Paoli,et al. Derivative measurements of the current-voltage characteristics of double-heterostructure injection lasers , 1976 .
[2] N.E. Schumaker,et al. Ambipolar transport in double heterostructure injection lasers , 1980, IEEE Electron Device Letters.
[3] Thomas L. Paoli,et al. Saturation of the junction voltage in stripe‐geometry (AlGa)As double‐heterostructure junction lasers , 1976 .
[4] W. B. Joyce,et al. Electrical derivative characteristics of InGaAsP buried heterostructure lasers , 1982 .
[5] N. Dutta,et al. Analysis of leakage currents in 1.3-µm InGaAsP real-index-guided lasers , 1984, Journal of Lightwave Technology.
[6] W. Joyce,et al. Fundamental and harmonic response voltages of a sinusoidally current‐modulated ideal semiconductor laser , 1976 .