Influence of electric field on photoluminescence of Cu(In,Ga)Se2-based solar cells

The photoluminescence (PL) of solar cells, based on Cu(In,Ga)Se2 and bare Cu(In,Ga)Se2 absorbers, has been studied. Shapes and intensity dependencies of the PL spectra in the junctions and in thin films are compared and discussed in terms of influence of the junction field. Measurements of the photoluminescence in the cells biased in the forward direction are employed in order to show straightforwardly how electric field changes the radiative recombination rate.

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