A New “Ammonia Bath” Method for Realizing Nitrogen Doping in ZnSnO Transistors

This work develops a novel “ammonia bath” method of realizing nitrogen anion rapid doping in ZnSnO (ZTO:N) thin film transistors (TFTs). The preparation, electrical properties and stability of ZTO:N TFTs are investigated. Based on X-ray photoelectron spectroscopy analysis, the oxygen vacancies of ZTO thin films decrease significantly from 25.4 % to 15.6 % with N doping. The results also demonstrate that positive bias stability is enhanced dramatically. The ZTO:N TFT with “ammonia bath” of 4 min shows a low threshold voltage shift of 0.18 V compared with 2.13 V of ZTO TFT. The improved stability and electrical properties of TFTs are attributed to suppression of oxygen-related defects caused by N.

[1]  Guoxia Liu,et al.  High-Performance Indium Oxide Thin-Film Transistors With Aluminum Oxide Passivation , 2019, IEEE Electron Device Letters.

[2]  Guoxia Liu,et al.  Electrospun ZnSnO Nanofibers for Neuromorphic Transistors With Ultralow Energy Consumption , 2019, IEEE Electron Device Letters.

[3]  Lei Xu,et al.  Effects of yttrium doping on the electrical performances and stability of ZnO thin-film transistors , 2019, Applied Surface Science.

[4]  Jianhua Zhang,et al.  Nitrogen-Doped ZnO Film Fabricated Via Rapid Low-Temperature Atomic Layer Deposition for High-Performance ZnON Transistors , 2018, IEEE Transactions on Electron Devices.

[5]  H. Duan,et al.  Enhanced Reliability of In–Ga–ZnO Thin-Film Transistors Through Design of Dual Passivation Layers , 2018, IEEE Transactions on Electron Devices.

[6]  Yongsheng Wang,et al.  Preparation and electrical properties of N-doped ZnSnO thin film transistors , 2018 .

[7]  Y. Park,et al.  A study on the electron transport properties of ZnON semiconductors with respect to the relative anion content , 2016, Scientific Reports.

[8]  D. Jeong,et al.  Growth Enhancement and Nitrogen Loss in ZnOxNy Low-Temperature Atomic Layer Deposition with NH3 , 2015 .

[9]  So Hee Kim,et al.  Bi-layer channel structure-based oxide thin-film transistors consisting of ZnO and Al-doped ZnO with different Al compositions and stacking sequences , 2015, Electronic Materials Letters.

[10]  H. Sirringhaus,et al.  Electronic Structure of Low-Temperature Solution-Processed Amorphous Metal Oxide Semiconductors for Thin-Film Transistor Applications , 2015, Advanced functional materials.

[11]  Rujie Sun,et al.  Characterization of amorphous Si-Zn-Sn-O thin films and applications in thin-film transistors , 2013 .

[12]  D. Janes,et al.  Interface studies of N2 plasma-treated ZnSnO nanowire transistors using low-frequency noise measurements , 2013, Nanotechnology.

[13]  Kinam Kim,et al.  Anion control as a strategy to achieve high-mobility and high-stability oxide thin-film transistors , 2013, Scientific Reports.

[14]  Miin-Jang Chen,et al.  Local electronic structures and electrical characteristics of well-controlled nitrogen-doped ZnO thin films prepared by remote plasma in situ atomic layer doping. , 2012, ACS applied materials & interfaces.

[15]  Sangsig Kim,et al.  Effect of hafnium addition on Zn-Sn-O thin film transistors fabricated by solution process , 2012 .

[16]  H. Ohta,et al.  Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors , 2004, Nature.