LINEAR AND NONLINEAR INTERSUBBAND REFRACTIVE INDEX CHANGES IN WURTZITE AlGaN/GaN DOUBLE QUANTUM WELLS: EFFECTS OF PIEZOELECTRICITY AND SPONTANEOUS POLARIZATION
暂无分享,去创建一个
[1] M. Lorke,et al. Excitation dependences of gain and carrier-induced refractive index change in quantum-dot lasers , 2007 .
[2] Shun Lien Chuang,et al. Theoretical and experimental study of optical gain, refractive index change, and linewidth enhancement factor of p-doped quantum-dot lasers , 2006, IEEE Journal of Quantum Electronics.
[3] A. Balandin,et al. Electron mobility enhancement in AlN/GaN/AlN heterostructures with InGaN nanogrooves , 2006 .
[4] Esther Baumann,et al. Electrically adjustable intersubband absorption of a GaN∕AlN superlattice grown on a transistorlike structure , 2006 .
[5] F. Julien,et al. Systematic experimental and theoretical investigation of intersubband absorption in GaN/AlN quantum wells , 2006 .
[6] Marc Ilegems,et al. Midinfrared intersubband absorption in lattice-matched AlInN/GaN multiple quantum wells , 2005 .
[7] C. Xia,et al. Exciton states in wurtzite InGaN strained coupled quantum dots: Effects of piezoelectricity and spontaneous polarization , 2005 .
[8] Li Zhang. Electric field effect on the linear and nonlinear intersubband refractive index changes in asymmetrical semiparabolic and symmetrical parabolic quantum wells , 2005 .
[9] K. Nishi,et al. Femtosecond time-resolved dispersion relation of complex nonlinear refractive index in a semiconductor quantum well , 2004 .
[10] Werner Wegscheider,et al. Excitonic signature in gain and carrier induced change of refractive index spectra of (In,Al)GaN quantum well lasers , 2004 .
[11] D. Passeri,et al. Second harmonic generation in AlGaN, GaN and AlxGa1–xN/GaN multiple quantum well structures , 2004 .
[12] H. Xie,et al. Electric field effect on the second-order nonlinear optical properties of parabolic and semiparabolic quantum wells , 2003 .
[13] Claire F. Gmachl,et al. Measurement of optical nonlinearities from intersubband transitions in GaN/AlGaN quantum wells at 1.5 μm , 2003 .
[14] A. Lell,et al. Influence of the carrier density on the optical gain and refractive index change in InGaN laser structures , 2003 .
[15] M. Manfra,et al. Nonparabolicity of the conduction band of wurtzite GaN , 2003, cond-mat/0309630.
[16] Jerry R. Meyer,et al. Band parameters for nitrogen-containing semiconductors , 2003 .
[17] Claire F. Gmachl,et al. Resonant optical nonlinearities from intersubband transitions in GaN/AlN quantum wells , 2003 .
[18] Hiroshi Harima,et al. TOPICAL REVIEW: Properties of GaN and related compounds studied by means of Raman scattering , 2002 .
[19] Kei Kaneko,et al. Near-infrared intersubband absorption in GaN/AlN quantum wells grown by molecular beam epitaxy , 2002 .
[20] J. Fraser,et al. Coherent control and enhancement of refractive index in an asymmetric double quantum well , 2000 .
[21] S. Nakamura,et al. Introduction to Nitride Semiconductor Blue Lasers and Light Emitting Diodes , 2000 .
[22] S. Denbaars,et al. Large interband second-order susceptibilities in InxGa1−xN/GaN quantum wells , 1999 .
[23] A. Djurišić,et al. Refractive index of InGaN/GaN quantum well , 1998 .
[24] D. Chemla,et al. REFRACTIVE INDEX AND ABSORPTION OF GAAS QUANTUM WELLS ACROSS EXCITONIC RESONANCES , 1998 .
[25] A. Othonos. Probing ultrafast carrier and phonon dynamics in semiconductors , 1998 .
[26] E. Rosencher,et al. Model system for optical nonlinearities: Asymmetric quantum wells. , 1991, Physical review. B, Condensed matter.
[27] S. Yee,et al. Free carrier induced changes in the absorption and refractive index for intersubband optical transitions in AlxGa1−xAs/GaAs/AlxGa1−xAs quantum wells , 1991 .
[28] S. Chuang,et al. Optical transitions in a parabolic quantum well with an applied electric field—analytical solutions , 1989 .
[29] Shun Lien Chuang,et al. Calculation of linear and nonlinear intersubband optical absorptions in a quantum well model with an applied electric field , 1987 .