论文信息 - High-Mobility Normally OFF Al2O3/AlGaN/GaN MISFET With Damage-Free Recessed-Gate Structure - 字舞流文

High-Mobility Normally OFF Al2O3/AlGaN/GaN MISFET With Damage-Free Recessed-Gate Structure

Liuan Li | Zhisheng Wu | Y. Ni | Yang Liu | Lei He | Taotao Que | Yawen Zhao | Liang He | Zhenxing Liu | J. Chen | Jialin Zhang | Xin Gu | Wenjing Wang | Jiexin Zheng | Yanfen Huang