Effect of Ge doping on growth stress and conductivity in AlxGa1-xN
暂无分享,去创建一个
[1] E. Monroy,et al. Electrical and optical properties of heavily Ge-doped AlGaN , 2018, Journal of Physics D: Applied Physics.
[2] J. Bläsing,et al. Germanium – the superior dopant in n‐type GaN , 2015 .
[3] J. Redwing,et al. In situ stress measurements during direct MOCVD growth of GaN on SiC , 2015 .
[4] A. Janotti,et al. Hybrid functional calculations of D X centers in AlN and GaN , 2014 .
[5] J. Maria,et al. Ge doped GaN with controllable high carrier concentration for plasmonic applications , 2013 .
[6] S. Raghavan,et al. Dislocation bending and tensile stress generation in GaN and AlGaN films , 2012 .
[7] J. Bläsing,et al. High Si and Ge n-type doping of GaN doping - Limits and impact on stress , 2012 .
[8] J. Lebeau,et al. On the strain in n-type GaN , 2011 .
[9] R. Dalmau,et al. Progress on n‐type doping of AlGaN alloys on AlN single crystal substrates for UV optoelectronic applications , 2011 .
[10] Z. Sitar,et al. Strain in Si doped GaN and the Fermi level effect , 2011 .
[11] S. Raghavan. Kinetic approach to dislocation bending in low-mobility films , 2011 .
[12] J. Redwing,et al. Effects of composition on dislocation microstructure and stress in Si-doped AlxGa1−xN , 2010 .
[13] J. Redwing,et al. Tensile stress generation and dislocation reduction in Si-doped AlxGa1−xN films , 2009 .
[14] Andrew A. Allerman,et al. Strain relaxation in AlGaN multilayer structures by inclined dislocations , 2009 .
[15] J. Redwing,et al. In situ measurement of stress generation arising from dislocation inclination in AlxGa1−xN:Si thin films , 2008 .
[16] Peter Veit,et al. MOVPE growth of GaN on Si - : Substrates and strain , 2007 .
[17] O. Ambacher,et al. Impact of silicon incorporation on the formation of structural defects in AlN , 2006 .
[18] S. Denbaars,et al. Cracking of III-nitride layers with strain gradients , 2006 .
[19] S. Raghavan,et al. Correlation of growth stress and structural evolution during metalorganic chemical vapor deposition of GaN on (111) Si , 2006 .
[20] Joan M. Redwing,et al. In situ stress measurements during MOCVD growth of AlGaN on SiC , 2004 .
[21] S. R. Lee,et al. Effect of diffraction and film-thickness gradients on wafer-curvature measurements of thin-film stress , 2004 .
[22] S. Raghavan,et al. In situ stress measurements during the MOCVD growth of AlN buffer layers on (1 1 1) Si substrates , 2004 .
[23] J. Bläsing,et al. Strains and Stresses in GaN Heteroepitaxy - Sources and Control , 2004 .
[24] A. Dadgar,et al. GaN‐based epitaxy on silicon: stress measurements , 2003 .
[25] J. Speck,et al. Stress relaxation in mismatched layers due to threading dislocation inclination , 2003 .
[26] James S. Speck,et al. Si doping effect on strain reduction in compressively strained Al0.49Ga0.51N thin films , 2003 .
[27] S. Denbaars,et al. Metalorganic chemical vapor deposition of highly conductive Al0.65Ga0.35N films , 2003 .
[28] D. Weyburne,et al. Determination of Alloy Composition and Residual Stress for AlxGa1–xN/GaN Epitaxial Films , 2001 .
[29] M. Kuball. Raman spectroscopy of GaN, AlGaN and AlN for process and growth monitoring/control , 2001 .
[30] S. Kamiyama,et al. Fracture of AlxGa1-xN/GaN Heterostructure –Compositional and Impurity Dependence– , 2001 .
[31] Joel W. Ager,et al. Effect of Si doping on strain, cracking, and microstructure in GaN thin films grown by metalorganic chemical vapor deposition , 2000 .
[32] D. Clarke,et al. MOSAIC STRUCTURE IN EPITAXIAL THIN FILMS HAVING LARGE LATTICE MISMATCH , 1997 .
[33] Klavs F. Jensen,et al. Computational Chemistry Predictions of Kinetics and Major Reaction Pathways for Germane Gas‐Phase Reactions , 1996 .
[34] Bernard S. Meyerson,et al. Silane pyrolysis rates for the modeling of chemical vapor deposition , 1987 .