Photoluminescence Properties from β-FeSi2 Film Epitaxially Grown on Si, YSZ and Si//YSZ

We have succeeded in expitaxial growth of (101) and (110)-oriented β-FeSi2 films on (111)Si, (111)Si-buffered (111)YSZ and (111)YSZ substrates by metal organic chemical vapor deposition (MOCVD). All the films showed highly perfection in orientation irrespective of the substrate. After annealing at 900°C in Ar atmosphere, their photoluminescences (PL) around 1.54 µm were observed in the β-FeSi2 films grown on (111)Si and (111)Si-buffered (111)YSZ substrates, except for the film on (111)YSZ substrates. This suggests that the β-FeSi2/Si interface is a crucial structure for enhancement of PL and that the Si atom diffuses into β-FeSi2 is important factor to 1.54-µm PL.