论文信息 - A simple two-port model of the metal oxide semiconductor transistor

A simple two-port model of the metal oxide semiconductor transistor

An accurate approximation of the exact two-port y-parameters of the metal oxide semiconductor transistor (MOST) operated in the saturation region, is obtained through proper truncation of continued fraction expansions of the parameters. Hence, a simple, single-section, lumped, two-port model is constructed which predicts the frequency and transient characteristics over the very wide frequency and time ranges.

Umesh Kumar | Umesh Kumar

[1] E. M. Cherry,et al. Small-signal high-frequency response of the insulated-gate field-effect transistor , 1970 .

[2] J. Hauser,et al. Small signal properties of field effect devices , 1965 .

[3] J. A. van Nielen,et al. A simple and accurate approximation to the high-frequency characteristics of insulated-gate field-effect transistors , 1969 .

[4] J.S.T. Huang,et al. Charge control approach to the small signal theory of field-effect devices , 1969 .

[5] A. van der Ziel,et al. Small-signal, high-frequency theory of field-effect transistors , 1964 .

[6] E. P. Merkes,et al. The Application of Continued Fractions and Their Generalizations to Problems in Approximation Theory (A. B. Khovanskii) , 1964 .

[7] F. A. Lindholm,et al. Unified modeling of field-effect devices , 1971 .

[8] W. Fischer,et al. Equivalent circuit and gain of MOS field effect transistors , 1966 .

[9] J. A. Geurst. Calculation of high-frequency characteristics of field-effect transistors , 1965 .

[10] J. A. Geurst,et al. Numerical data on the high-frequency characteristics of thin-film transistors , 1965 .

[11] A. G. Jordan,et al. A Small-signal, High-frequency Analysis of the Insulated-gate Field-effect Transistor† , 1965 .

[12] C. Sah. Characteristics of the metal-Oxide-semiconductor transistors , 1964 .