Feram cell technologies : Special issue on ferroelectric memory technology

This paper describes some cell technologies for high-density FeRAMs. A ferroelectric capacitor ∼ over bit line (F-COB) cell architecture using one transistor and one ferroelectric capacitor is introduced to reduce the cell area. A memory cell with a 0.7 μm design rule was successfully fabricated using CMP and MOCVD techniques. Good ferroelectric properties of strange capacitor have been realized and the cell operation has been confirmed.