论文信息 - Deep etching of epitaxial gallium nitride film by multiwavelength excitation process using F2 and KrF excimer lasers

Deep etching of epitaxial gallium nitride film by multiwavelength excitation process using F2 and KrF excimer lasers

The deep etching of GaN(0001) thin films epitaxially grown on Al2O3(0001) has been investigated by laser ablation using F2 and KrF excimer lasers. The simultaneous irradiation with F2 and KrF excimer lasers markedly improves etching quality compared with single-KrF excimer laser ablation and provides almost the same quality as that in the case of single-F2 laser ablation with a high etching rate. Additionally, the present method achieves the deep etching of a GaN film of more than 5 μm in depth with steep side walls at an angle of 87° by changing the laser incidence angle.

[1] K. Sugioka,et al. GaN ablation etching by simultaneous irradiation with F2 laser and KrF excimer laser , 2001 .

[2] Robert F. Davis,et al. High rate and selective etching of GaN, AlGaN, and AlN using an inductively coupled plasma , 1997 .

[3] Ablation of GaN Using a Femtosecond Laser , 2002 .

[4] E. Muñoz,et al. Reactive ion etching of GaN layers using , 1997 .

[5] KrF excimer laser induced ablation–planarization of GaN surface , 1999 .

[6] Koji Sugioka,et al. Precise microfabrication of wide band gap semiconductors (SiC and GaN) by VUV–UV multiwavelength laser ablation , 1998 .

[7] J. Harris,et al. Reactive ion etching of GaN using CHF3/Ar and C2ClF5/Ar plasmas , 1995 .

[8] K. Sugioka,et al. F2 laser etching of GaN , 2000 .

[9] S. Pearton,et al. Low energy electron-enhanced etching of GaN/Si in hydrogen direct current plasma , 1996 .

[10] M. Obara,et al. High-speed ablation etching of GaN semiconductor using femtosecond laser , 2001 .

[11] Robert F. Karlicek,et al. Inductively coupled plasma etching of GaN , 1996 .

[12] I. B. Bhat,et al. Reactive ion etching of GaN in BCl{sub 3}/N{sub 2} plasmas , 1997 .

[13] K. Sugioka,et al. High-speed etching of hexagonal GaN by laser ablation and successive chemical treatment , 1999 .