Surface chemistry and preferential crystal orientation on the H and Cl terminated silicon surface

Surface chemistry and determining factors of the preferential crystal orientation are discussed through the deposition studies on hydrogenated chlorinated crystalline silicon films by rf plasma-enhanced chemical vapor deposition of a dichlorosilane, SiH2Cl2, and H2 mixture. The growth of randomly oriented crystal Si films occurred from the initial growth stage. On the other hand, the incubation layer of amorphous Si was formed in the initial stage, and subsequently, the growth of (220) preferred crystal orientation proceeded. They are determined by the thermal abstraction of H from the growing surface at substrate temperature above 350°C. Higher degree of Cl termination was effective in suppressing the oxygen incorporation into the Si network, although it did not contribute directly to the preferred crystal orientation. The insertion of atomic hydrogen to the Si–Si back bond in the subsurface region promoted the SiHClx complex formation, which was the most possible nucleation site for promoting the (220) ...

[1]  N. Lewis,et al.  Chlorination of hydrogen-terminated silicon (111) surfaces , 2005 .

[2]  Sandrine Rivillon,et al.  Gas phase chlorination of hydrogen-passivated silicon surfaces , 2004 .

[3]  H. Shirai,et al.  Surface Chemistry of Si:H:Cl Film Formation by RF Plasma-Enhanced Chemical Vapor Deposition of SiH2Cl2 and SiCl4 , 2003 .

[4]  A. Matsuda,et al.  Low-Temperature Formation of Polycrystalline Silicon and Its Device Application , 2003 .

[5]  I. Herman,et al.  Optical diagnostics for thin film processing. , 1995, Annual review of physical chemistry.

[6]  H. Shirai,et al.  Chemistry of the chlorine-terminated surface for low-temperature growth of crystal silicon films by RF plasma-enhanced chemical vapor deposition , 2002 .

[7]  A. Matsuda,et al.  Promising window layer of thin film si solar cell with p-i-n structure prepared by using SiH2Cl2 , 2002 .

[8]  Haiping Liu,et al.  Growth of Crystal Silicon Films from Chlorinated Silanes by RF Plasma-Enhanced Chemical Vapor Deposition , 2001 .

[9]  Haiping Liu,et al.  Low-Temperature Plasma-Enahanced Chemical Vapor Deposition of Crystal Silicon Film from Dichlorosilane , 2001 .

[10]  M. Maaza,et al.  Direct production of thermochromic VO2 thin film coatings by pulsed laser ablation , 2000 .

[11]  T. Gotoh,et al.  The light-induced metastable lattice expansion in hydrogenated amorphous silicon , 2000 .

[12]  A. Matsuda,et al.  Low-temperature growth of crystalline silicon on a chlorine-terminated surface , 1999 .

[13]  Takuya Nakamura,et al.  Enhanced Crystallinity at Initial Growth Stage of Microcrystalline Silicon on Corning #7059 Glass Using SiH2Cl2 , 1999 .

[14]  Arvind Shah,et al.  Hydrogen in amorphous and microcrystalline silicon films prepared by hydrogen dilution , 1996 .

[15]  Gerald Earle Jellison,et al.  Erratum: ‘‘Parameterization of the optical functions of amorphous materials in the interband region’’ [Appl. Phys. Lett. 69, 371 (1996)] , 1996 .

[16]  Jin Jang,et al.  Preparation of wide band gap microcrystalline silicon film by using SiH2Cl2 , 1996 .

[17]  N. Hata,et al.  Enhancement of the deposition rate of a-Si:H by introduction of an electronegative molecule into a silane discharge , 1996 .

[18]  I. Herman.  CHAPTER 9 – Reflection , 1996 .

[19]  Y. Mashiko,et al.  Variation of Size and Density of Pyramidal Hillock during Epitaxial Growth of Silicon Using Dichlorosilane Gas , 1995 .

[20]  H. Shirai.  Surface Morphology and Crystallite Size during Growth of Hydrogenated Microcrystalline Silicon by Plasma-Enhanced Chemical Vapor Deposition , 1995 .

[21]  M. B. Robinson,et al.  Adsorption and decomposition of trichlorosilane and trichlorogermane on porous silicon and Si(100)2×1 surfaces , 1995 .

[22]  B. Drévillon,et al.  Role of Hydrogen Plasma during Growth of Hydrogenated Microcrystalline Silicon: In Situ UV-Visible and Infrared Ellipsometry Study , 1994 .

[23]  Ganguly,et al.  Defect formation during growth of hydrogenated amorphous silicon. , 1993, Physical review. B, Condensed matter.

[24]  J. Hanna,et al.  A novel preparation technique for preparing hydrogenated amorphous silicon with a more rigid and stable Si network , 1991 .

[25]  Cardona,et al.  Temperature dependence of the dielectric function and interband critical points in silicon. , 1987, Physical review. B, Condensed matter.

[26]  J. Hanna,et al.  Growth of Amorphous and Crystalline Silicon by HR-CVD (Hydrogen Radical Enhanced CVD) , 1987 .

[27]  P. Fauchais,et al.  Kinetic modelling of the reduction of SiCl4 in an arc heater for the production of silicon , 1982 .

[28]  W. Claassen,et al.  The Nucleation of CVD Silicon on SiO2 and Si3 N 4 Substrates II . The System , 1980 .