论文信息 - A configurable 2-in-1 SRAM compiler with constant-negative-level write driver for low Vmin in 16nm Fin-FET CMOS

A configurable 2-in-1 SRAM compiler with constant-negative-level write driver for low Vmin in 16nm Fin-FET CMOS

This paper presents a configurable SRAM for low voltage operation supporting both pseudo two-port SRAM (P2P-SRAM) and single-port SRAM (SP-SRAM) functions in one compiler. Unlike conventional pseudo two-port SRAM that always performs read first, this work enables dynamic read-or-write-first selection and write-through function. It can improve SP-SRAM function speed by 90% faster than that of the conventional read-first pseudo two-port SRAM design. An area-free constant-negative-level write driver (CNL-WD), which is suitable for compiler development, is used to improve write Vmin for configuration range from 4 to 256 cells/BL. A testchip is fabricated in a 16nm Fin-FET CMOS technology with a 0.0907μm2 6T-SRAM cell.

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