III–V Multiple-Gate Field-Effect Transistors With High-Mobility $\hbox{In}_{0.7}\hbox{Ga}_{0.3}\hbox{As}$ Channel and Epi-Controlled Retrograde-Doped Fin

We report an In<sub>0.7</sub>Ga<sub>0.3</sub>As n-channel multiple-gate field-effect transistor (MuGFET), featuring a lightly doped high-mobility channel with 70% indium and an epi-controlled retrograde-doped fin structure to suppress short-channel effects (SCEs). The retrograde well effectively reduces subsurface punch-through in the bulk MuGFET structure. The multiple-gate structure achieves good electrostatic control of the channel potential and SCEs in the In<sub>0.7</sub>Ga<sub>0.3</sub>As n-MuGFETs as compared with planar In<sub>0.7</sub>Ga<sub>0.3</sub>As MOSFETs. The In<sub>0.7</sub>Ga<sub>0.3</sub>As n-MuGFET with 130-nm channel length demonstrates a drain-induced barrier lowering of 135 mV/V and a drive current exceeding 840 μA/μm at V<sub>DS</sub> = 1.5 V and V<sub>GS</sub> - V<sub>T</sub> = 3 V.

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