论文信息 - Low Threshold and High Characteristic Temperature 1.3 µm Range GaInNAs Lasers Grown by Metalorganic Chemical Vapor Deposition

Low Threshold and High Characteristic Temperature 1.3 µm Range GaInNAs Lasers Grown by Metalorganic Chemical Vapor Deposition

Highly strained 1.3 µm range GaInNAs/GaAs double quantum-well lasers grown by metalorganic chemical vapor deposition are demonstrated. A high characteristic temperature of 205 K (22–80°C) was obtained with a low threshold current density of 0.92 kA/cm2 (22°C) in a broad stripe laser. The highest lasing operation temperature of 170°C, and continuous-wave operation with a low threshold current of 27 mA were also obtained in a 7.5-µm-wide ridge-stripe laser. The GaInNAs/GaAs material system is very promising for next-generation long-wavelength lasers.

Shunichi Sato | S. Sato

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